In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH
This invention was made with Government support under grant number CNS-0720825, awarded by the National Science Foundation; grant number DE-FC-36-05-GO15073, awarded by the Department of Energy; grant number DE-AC05-000R22725, awarded by the Department of Energy; grant number W911NF-08-C-0019, awarded by the Department of Defense; and grant number W911NF-08-C-0133, awarded by the Department of Defense. The Government has certain rights in the invention.