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Growth of graphene films from non-gaseous carbon sources

United States Patent

August 4, 2015
View the Complete Patent at the US Patent & Trademark Office
In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.
Tour; James (Bellaire, TX), Sun; Zhengzong (Houston, TX), Yan; Zheng (Houston, TX), Ruan; Gedeng (Houston, TX), Peng; Zhiwei (Houston, TX)
13/ 561,889
July 30, 2012
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH This invention was made with government support under Sandia National Laboratory Grant No. 1100745, awarded by the U.S. Department of Energy; Office of Naval Research Grant No. N00014-09-1-1066, awarded by the U.S. Department of Defense; and Air Force Office of Scientific Research Grant No. FA 9550-09-1-0581, awarded by the U.S. Department of Defense. The government has certain rights in the invention.