A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.
STATEMENT REGARDING SPONSORED RESEARCH
This invention was made with government support under Grant No. ZXL-5-44205-01 awarded by the U.S. Department of Energy, National Renewable Energy Laboratory. The government has certain rights in this invention.