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Transistor having elevated drain finger termination

United States Patent

June 30, 2015
View the Complete Patent at the US Patent & Trademark Office
According to an exemplary implementation, a transistor includes drain finger electrodes interdigitated with source finger electrodes. The transistor also includes a current conduction path in a semiconductor substrate between the drain finger electrodes and the source finger electrodes. At least one of the drain finger electrodes has a drain finger electrode end and a drain finger electrode main body, where the drain finger electrode main body is non-coplaner with at least a portion of the drain finger electrode end. The transistor may also include a dielectric material situated between at least a portion of the drain finger electrode end and the semiconductor substrate. The dielectric material can be an increasing thickness dielectric material. The dielectric material can thus elevate the drain finger electrode end over the semiconductor substrate. Further, the drain finger electrode end can have an increased radius of curvature.
Briere; Michael A. (Scottsdale, AZ), Garg; Reenu (Torrance, CA)
International Rectifier Corporation (El Segundo, CA)
13/ 941,335
July 12, 2013
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-AR0000016 awarded by Advanced Research Projects Agency-Energy (ARPA-E). The Government has certain rights in this invention.