Skip to Content
Find More Like This
Return to Search

Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction

United States Patent

May 12, 2015
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
Microsystems Enabled Photovoltaics (MEPV)
A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatus are also disclosed.
Tauke-Pedretti; Anna (Albuquerque, NM), Nielson; Gregory N. (Albuquerque, NM), Cederberg; Jeffrey G. (Albuquerque, NM), Cruz-Campa; Jose Luis (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
14/ 067,433
October 30, 2013
STATEMENT OF GOVERNMENT RICHES This invention was developed under Contract DE-AC04-94AL85000 between Sandia Corporation and the U.S. Department of Energy. The U.S. Government has certain rights in this invention.