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Growth process for gallium nitride porous nanorods

United States Patent

March 24, 2015
View the Complete Patent at the US Patent & Trademark Office
A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiN.sub.x on the GaN film, etching a growth opening through the SiN.sub.x and into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiN.sub.x layer can be removed after the growing step. A SiO.sub.x template can be formed on the GaN film and the GaN can be grown to cover the SiO.sub.x template before depositing SiN.sub.x on the GaN film. The SiO.sub.x template can be removed after growing the nanorods.
Wildeson; Isaac Harshman (West Lafayette, IN), Sands; Timothy David (West Lafayette, IN)
Purdue Research Foundation (West Lafayette, IN)
13/ 080,165
April 5, 2011
GOVERNMENTAL SUPPORT INFORMATION This invention was made with government support under DE-FC26-06NT42862 awarded by Department of Energy. The government has certain rights in the invention.