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Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

United States Patent

November 25, 2014
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.
Sopori; Bhushan (Denver, CO), Rangappan; Anikara (Rancho Palos Verdes, CA)
Alliance for Sustainable Energy, LLC (Golden, CO)
13/ 793,626
March 11, 2013
CONTRACTUAL ORIGIN The United States Government has rights in this invention under Contract No. DE-AC36-08GO28308 between the United States Department of Energy and the Alliance for Sustainable Energy, LLC, the Manager and Operator of the National Renewable Energy Laboratory.