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Amber light-emitting diode comprising a group III-nitride nanowire active region

United States Patent

July 22, 2014
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.
Wang; George T. (Albuquerque, NM), Li; Qiming (Albuquerque, NM), Wierer, Jr.; Jonathan J. (Albuquerque, NM), Koleske; Daniel (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
13/ 743,438
January 17, 2013
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.