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Lattice-mismatched GaInP LED devices and methods of fabricating same

United States Patent

October 21, 2014
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
High Bandgap Phosphide Approaches for LED Applications
A method (100) of fabricating an LED or the active regions of an LED and an LED (200). The method includes growing, depositing or otherwise providing a bottom cladding layer (208) of a selected semiconductor alloy with an adjusted bandgap provided by intentionally disordering the structure of the cladding layer (208). A first active layer (202) may be grown above the bottom cladding layer (208) wherein the first active layer (202) is fabricated of the same semiconductor alloy, with however, a partially ordered structure. The first active layer (202) will also be fabricated to include a selected n or p type doping. The method further includes growing a second active layer (204) above the first active layer (202) where the second active layer (204) Is fabricated from the same semiconductor alloy.
Mascarenhas; Angelo (Golden, CO), Steiner; Myles A. (Golden, CO), Bhusal; Lekhnath (Golden, CO), Zhang; Yong (Golden, CO)
Alliance for Sustainable Energy, LLC (Golden, CO)
13/ 262,509
April 15, 2010
CONTRACTUAL ORIGIN The United States Government has rights in this invention under Contract No. DE-AC36-08G028308 between the United States Department of Energy and the Alliance for Sustainable Energy, LLC, the manager and operator of the National Renewable Energy Laboratory.