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Back-side readout semiconductor photomultiplier

United States Patent

8,729,654
May 20, 2014
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.
Choong; Woon-Seng (Oakland, CA), Holland; Stephen E. (Hercules, CA)
The Regents of the University of California (Oakland, CA)
13/ 652,238
20130099346
October 15, 2012
STATEMENT OF GOVERNMENT SUPPORT This invention was made with government support under Contract No. DE-AC02-05CH11231 awarded by the U.S. Department of Energy and Contract No. R21EB007081 awarded by the National Institutes of Health. The government has certain rights in this invention.