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Yttrium contacts for germanium semiconductor radiation detectors

United States Patent

May 20, 2014
View the Complete Patent at the US Patent & Trademark Office
A germanium semiconductor radiation detector contact made of yttrium metal. A thin (.about.1000 .ANG.) deposited layer of yttrium metal forms a thin hole-barrier and/or electron-barrier contact on both p- and n-type germanium semiconductor radiation detectors. Yttrium contacts provide a sufficiently high hole barrier to prevent measurable contact leakage current below .about.120 K. The yttrium contacts can be conveniently segmented into multiple electrically independent electrodes having inter-electrode resistances greater than 10 G.OMEGA.. Germanium semiconductor radiation detector diodes fabricated with yttrium contacts provide good gamma-ray spectroscopy data.
Hull; Ethan (Oak Ridge, TN), Pehl; Richard (Raymond, WA), Suttle; Bruce (Oak Ridge, TN), Lathrop; James (Oak Ridge, TN)
13/ 068,811
May 20, 2011
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This invention was made with government support under DE-SC0002477 awarded by the U.S. Department of Energy Office of Nuclear Physics. The government has certain rights in the invention.