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Method to grow group III-nitrides on copper using passivation layers

United States Patent

June 3, 2014
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.
Li; Qiming (Albuquerque, NM), Wang; George T. (Albuquerque, NM), Figiel; Jeffrey T. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
13/ 836,594
March 15, 2013
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.