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p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells

United States Patent

November 25, 2014
View the Complete Patent at the US Patent & Trademark Office
The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.
Irwin; Michael D. (Chicago, IL), Buchholz; Donald B. (Woodridge, IL), Marks; Tobin J. (Evanston, IL), Chang; Robert P. H. (Glenview, IL)
Northwestern University (Evanston, IL)
12/ 191,407
August 14, 2008
STATEMENT AS TO RIGHTS UNDER FEDERALLY-SPONSORED RESEARCH This invention was made with government support under grant number DE-FG02-06ER46320 awarded by the Department of Energy. The government has certain rights in the invention.