The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.
STATEMENT OF GOVERNMENT INTEREST
This invention was made with U.S. government support from the National Science Foundation and the U.S. Department of Energy. The U.S. government has certain rights in the invention.