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Ultratough single crystal boron-doped diamond

United States Patent

May 5, 2015
View the Complete Patent at the US Patent & Trademark Office
The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.
Hemley; Russell J. (Washington, DC), Mao; Ho-Kwang (Washington, DC), Yan; Chih-Shiue (Washington, DC), Liang; Qi (Washington, DC)
Carnegie Institution of Washington (Washington, DC)
12/ 435,565
May 5, 2009
STATEMENT OF GOVERNMENT INTEREST This invention was made with U.S. government support from the National Science Foundation and the U.S. Department of Energy. The U.S. government has certain rights in the invention.