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Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere

United States Patent

May 27, 2014
View the Complete Patent at the US Patent & Trademark Office
A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.
Hersam; Mark C. (Wilmette, IL), Lipson; Albert L. (Evanston, IL), Bandyopadhyay; Sudeshna (Chicago, IL), Karmel; Hunter J. (Evanston, IL), Bedzyk; Michael J. (Wilmette, IL)
Northwestern University (Evanston, IL)
13/ 457,070
April 26, 2012
This invention was made with government support under DE-AC02-06CH11357 (Subcontract 8F00661) awarded by the Department of Energy. The government has certain rights in the invention.