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Off-axis silicon carbide substrates

United States Patent

September 2, 2014
View the Complete Patent at the US Patent & Trademark Office
Brookhaven National Laboratory - Visit the Office of Technology Commercialization and Partnerships Website
A method of epitaxial growth of a material on a crystalline substrate includes selecting a substrate having a crystal plane that includes a plurality of terraces with step risers that join adjacent terraces. Each terrace of the plurality or terraces presents a lattice constant that substantially matches a lattice constant of the material, and each step riser presents a step height and offset that is consistent with portions of the material nucleating on adjacent terraces being in substantial crystalline match at the step riser. The method also includes preparing a substrate by exposing the crystal plane; and epitaxially growing the material on the substrate such that the portions of the material nucleating on adjacent terraces merge into a single crystal lattice without defects at the step risers.
Edgar; James (Manhattan, KS), Dudley; Michael (Miller Place, NY), Kuball; Martin (Bristol, GB), Zhang; Yi (Manhattan, KS), Wang; Guan (Worcester, MA), Chen; Hui (Stony Brook, NY), Zhang; Yu (Stony Brook, NY)
Kansas State University Research Foundation (Manhattan, KS), State University of New York Stony Brook (Albany, NY), The University of Bristol (Bristol, GB)
12/ 966,753
December 13, 2010
STATEMENT REGARDING FEDERALLY-SPONSORED RESEARCH Certain research included in this application was funded by the National Science Foundation Materials World Network Program under Grant No. 0602875 and by the Engineering and Physical Science Research Council (EPSRC) under Grant No. EP/D075033/1 under the NSF-EPSRC Joint Materials Program. Some testing was carried out at the Brookhaven National Laboratory (BNL), which is supported by the U.S. Department of Energy (D.O.E.) under Grant No. DE-AC02-76CH00016. Other research was conducted at the Center for Functional Nanomaterials, BNL, which is supported by the U.S. Department of Energy, Division of Materials Sciences and Division of Chemical Sciences, under Contract No. DE-AC02-98CH10886.