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Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication

United States Patent

8,735,204
May 27, 2014
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
Contact Formation and Gettering of Precipitated Impurities by Multiple Firing During Semiconductor Device Fabrication
Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.
Sopori; Bhushan (Denver, CO)
Alliance for Sustainable Energy, LLC (Golden, CO)
13/ 744,152
January 17, 2013
GOVERNMENT LICENSE RIGHTS The United States Government has rights in this invention under Contract No. DE-AC36-08GO28308 between the United States Department of Energy and the Alliance for Sustainable Energy, LLC, the Manager and Operator of the National Renewable Energy Laboratory.