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Method of fabricating vertically aligned group III-V nanowires

United States Patent

November 25, 2014
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A top-down method of fabricating vertically aligned Group III-V micro- and nanowires uses a two-step etch process that adds a selective anisotropic wet etch after an initial plasma etch to remove the dry etch damage while enabling micro/nanowires with straight and smooth faceted sidewalls and controllable diameters independent of pitch. The method enables the fabrication of nanowire lasers, LEDs, and solar cells.
Wang; George T. (Albuquerque, NM), Li; Qiming (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
13/ 743,433
January 17, 2013
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.