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Impurity-induced disorder in III-nitride materials and devices

United States Patent

November 25, 2014
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.
Wierer, Jr.; Jonathan J. (Albuquerque, NM), Allerman; Andrew A. (Tijeras, NM)
Sandia Corporation (Albuquerque, NM)
13/ 558,516
July 26, 2012
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.