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Method of forming through substrate vias (TSVs) and singulating and releasing die having the TSVs from a mechanical support substrate

United States Patent

December 9, 2014
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
Microsystems Enabled Photovoltaics (MEPV)
Accessing a workpiece object in semiconductor processing is disclosed. The workpiece object includes a mechanical support substrate, a release layer over the mechanical support substrate, and an integrated circuit substrate coupled over the release layer. The integrated circuit substrate includes a device layer having semiconductor devices. The method also includes etching through-substrate via (TSV) openings through the integrated circuit substrate that have buried ends at or within the release layer including using the release layer as an etch stop. TSVs are formed by introducing one or more conductive materials into the TSV openings. A die singulation trench is etched at least substantially through the integrated circuit substrate around a perimeter of an integrated circuit die. The integrated circuit die is at least substantially released from the mechanical support substrate.
Okandan; Murat (Edgewood, NM), Nielson; Gregory N. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
14/ 063,152
October 25, 2013
STATEMENT OF GOVERNMENT RIGHTS This invention was developed under Contract DE-AC04-94AL85000 between Sandia Corporation and the U.S. Department of Energy. The U.S. Government has certain rights in this invention.