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Memristor using a transition metal nitride insulator

United States Patent

October 28, 2014
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
Apparatus is disclosed in which at least one resistive switching element is interposed between at least a first and a second conducting electrode element. The resistive switching element comprises a metal oxynitride. A method for making such a resistive switching element is also disclosed.
Stevens; James E. (Albuquerque, NM), Marinella; Matthew (Albuquerque, NM), Lohn; Andrew John (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
13/ 750,451
January 25, 2013
STATEMENT OF GOVERNMENT INTEREST This invention was developed under Contract DE-AC04-94AL85000 between Sandia Corporation and the U.S. Department of Energy. The U.S. Government has certain rights in this invention.