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III-Nitride semiconductor structures with strain absorbing interlayer transition modules

United States Patent

February 17, 2015
View the Complete Patent at the US Patent & Trademark Office
There are disclosed herein various implementations of semiconductor structures including III-Nitride interlayer modules. One exemplary implementation comprises a substrate and a first transition body over the substrate. The first transition body has a first lattice parameter at a first surface and a second lattice parameter at a second surface opposite the first surface. The exemplary implementation further comprises a second transition body, such as a transition module, having a smaller lattice parameter at a lower surface overlying the second surface of the first transition body and a larger lattice parameter at an upper surface of the second transition body, as well as a III-Nitride semiconductor layer over the second transition body. The second transition body may consist of two or more transition modules, and each transition module may include two or more interlayers. The first and second transition bodies reduce strain for the semiconductor structure.
Briere; Michael A. (Scottsdale, AZ)
International Rectifier Corporation (El Segundo, CA)
13/ 405,180
February 24, 2012
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-AR0000016 awarded by Advanced Research Projects Agency-Energy (ARPA-E). The Government has certain rights in this invention.