The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.
The claimed invention was made with U.S. Government support under grant numbers W911NF-05-1-0340, W911NF-06-1-0030, and W911NF-06-1-0183 awarded by the Department of Defense (DOD) and grant number FG 02-08ER46526 awarded by the Department of Energy (DoE). The government has certain rights in this invention.