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Mutually injection locked lasers for enhanced frequency response

United States Patent

April 1, 2014
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
Semiconductor light-emitting devices; methods of forming semi-conductor light emitting devices, and methods of operating semi-conductor light emitting devices are provided. A semiconductor light-emitting device includes a first laser section monolithically integrated with a second laser section on a common substrate. Each laser section has a phase section, a gain section and at least one distributed Bragg reflector (DBR) structure. The first laser section and the second laser section are optically coupled to permit optical feedback therebetween. Each phase section is configured to independently tune a respective one of the first laser section and second laser section relative to each other.
Tauke-Pedretti; Anna (Albuquerque, NM), Skogen; Erik J. (Albuquerque, NM), Vawter; Gregory A. (Corrales, NM), Chow; Weng W. (Cedar Crest, NM)
Sandia Corporation (Albuquerque, NM)
13/ 233,221
September 15, 2011
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH This invention was developed under Contract DE-AC04-94AL85000 between Sandia Corporation and the U.S. Department of Energy. The U.S. Government has certain rights in this invention.