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Laterally injected light-emitting diode and laser diode

United States Patent

June 16, 2015
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.
Miller; Mary A. (Albuquerque, NM), Crawford; Mary H. (Albuquerque, NM), Allerman; Andrew A. (Tijeras, NM)
Sandia Corporation (Albuquerque, NM)
14/ 549,233
November 20, 2014
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.