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Wet-chemical systems and methods for producing black silicon substrates

United States Patent

May 19, 2015
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
Black Silicon Etching
A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.
Yost; Vernon (Lakewood, CO), Yuan; Hao-Chih (Golden, CO), Page; Matthew (Golden, CO)
Alliance for Sustainable Energy, LLC (Golden, CO)
13/ 825,541
November 11, 2010
CONTRACTUAL ORIGIN The United States Government has rights in this invention under Contract No. DE-AC36-08GO28308 between the United States Department of Energy and the Alliance for Sustainable Energy, LLC, the manager and operator of the National Renewable Energy Laboratory.