Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains.
REFERENCE TO GOVERNMENT RIGHTS
This invention was made with government support under W911NF-12-1-0025 awarded by the ARMY/ARO and DE-SC0006414 awarded by the U.S. Department of Energy. The government has certain rights in the invention.