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High speed low loss gate drive circuit

United States Patent

September 30, 2014
View the Complete Patent at the US Patent & Trademark Office
A gate drive circuit includes an insulated gate semiconductor switch. A controlled current source is connected to the semiconductor switch gate terminal to provide a gate drive circuit that is responsive to recycled gate charge corresponding to an internal gate capacitance of the insulated gate semiconductor switch.
Tao; Fengfeng (Clifton Park, NY), Saddoughi; Seyed Gholamali (Clifton Park, NY), Herbon; John Thomas (Loveland, OH)
General Electric Company (Niskayuna, NY)
13/ 336,669
December 23, 2011
This invention was made with Government support under contract number DE-FC26-08NT05868, awarded by the U.S. Department of Energy. The Government has certain rights in the invention.