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Growth of large aluminum nitride single crystals with thermal-gradient control

United States Patent

May 12, 2015
View the Complete Patent at the US Patent & Trademark Office
In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
Bondokov; Robert T. (Watervliet, NY), Rao; Shailaja P. (Albany, NY), Gibb; Shawn Robert (Clifton Park, NY), Schowalter; Leo J. (Latham, NY)
Crystal IS, Inc. (Green Island, NY)
13/ 173,213
June 30, 2011
GOVERNMENT SUPPORT This invention was made with United States Government support under contract number DE-FC26-08-NT01578 awarded by the Department of Energy (DOE). The United States Government has certain rights in the invention.