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Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

United States Patent

November 11, 2014
View the Complete Patent at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.
Sherohman; John W. (Livermore, CA), Yee; Jick Hong (Livermore, CA), Combs, III; Arthur W. (Livermore, CA)
Lawrence Livermore National Security, LLC (Livermore, CA)
13/ 280,164
October 24, 2011
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT The United States Government has rights in this invention pursuant to Contract No. DE-AC52-07NA27344 between the U.S. Department of Energy and Lawrence Livermore National Security, LLC, for the operation of Lawrence Livermore National Laboratory.