Skip to Content
Find More Like This
Return to Search

Ultra-thin ohmic contacts for p-type nitride light emitting devices

United States Patent

June 24, 2014
View the Complete Patent at the US Patent & Trademark Office
A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.
Raffetto; Mark (Santa Barbara, CA), Bharathan; Jayesh (Cary, NC), Haberern; Kevin (Cary, NC), Bergmann; Michael (Chapel Hill, NC), Emerson; David (Chapel Hill, NC), Ibbetson; James (Santa Barbara, CA), Li; Ting (Ventura, CA)
Cree, Inc. (Durham, NC)
13/ 271,865
October 12, 2011
STATEMENT OF GOVERNMENT SUPPORT This Invention was made with Government support under grant number DE-FC26-00NT40985 from the Department Of Energy. The Government has certain rights to this invention.