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RF-driven ion source with a back-streaming electron dump

United States Patent

May 20, 2014
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
A novel ion source is described having an improved lifetime. The ion source, in one embodiment, is a proton source, including an external RF antenna mounted to an RF window. To prevent backstreaming electrons formed in the beam column from striking the RF window, a back streaming electron dump is provided, which in one embodiment is formed of a cylindrical tube, open at one end to the ion source chamber and capped at its other end by a metal plug. The plug, maintained at the same electrical potential as the source, captures these backstreaming electrons, and thus prevents localized heating of the window, which due to said heating, might otherwise cause window damage.
Kwan; Joe (Castro Valley, CA), Ji; Qing (Albany, CA)
The Regents of the University of California (Oakland, CA)
13/ 014,956
January 27, 2011
STATEMENT OF GOVERNMENTAL SUPPORT The invention described and claimed herein was made in part utilizing funds supplied by the U.S. Department of Energy under Contract No. DE-AC02-05CH11231 between the U.S. Department of Energy and the Regents of the University of California for the management and operation of the Lawrence Berkeley National Laboratory. The government has certain rights in this invention.