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Method of lift-off patterning thin films in situ employing phase change resists

United States Patent

September 23, 2014
View the Complete Patent at the US Patent & Trademark Office
Method for making a patterned thin film of an organic semiconductor. The method includes condensing a resist gas into a solid film onto a substrate cooled to a temperature below the condensation point of the resist gas. The condensed solid film is heated selectively with a patterned stamp to cause local direct sublimation from solid to vapor of selected portions of the solid film thereby creating a patterned resist film. An organic semiconductor film is coated on the patterned resist film and the patterned resist film is heated to cause it to sublime away and to lift off because of the phase change.
Bahlke; Matthias Erhard (Cambridge, MA), Baldo; Marc A. (Lexington, MA), Mendoza; Hiroshi Antonio (Cambridge, MA)
Massachusetts Institute of Technology (Cambridge, MA)
13/ 465,065
May 7, 2012
This invention was made with government support under Grant No, DE-SC00G1088, awarded by the Department of Energy. The government has certain rights in this invention.