The present nanomembrane structures include a multilayer film comprising a single-crystalline layer of semiconductor material disposed between two other single-crystalline layers of semiconductor material. A plurality of holes extending through the nanomembrane are at least partially, and preferably entirely, filled with a filler material which is also a semiconductor, but which differs from the nanomembrane semiconductor materials in composition, crystal orientation, or both.
STATEMENT OF GOVERNMENT RIGHTS
This invention was made with United States government support awarded by the following agencies: Department of Energy under grant number DE-FG02-03ER46028. The United States government has certain rights in this invention.