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High-resolution parallel-detection sensor array using piezo-phototronics effect

United States Patent

July 28, 2015
View the Complete Patent at the US Patent & Trademark Office
A pressure sensor element includes a substrate, a first type of semiconductor material layer and an array of elongated light-emitting piezoelectric nanostructures extending upwardly from the first type of semiconductor material layer. A p-n junction is formed between each nanostructure and the first type semiconductor layer. An insulative resilient medium layer is infused around each of the elongated light-emitting piezoelectric nanostructures. A transparent planar electrode, disposed on the resilient medium layer, is electrically coupled to the top of each nanostructure. A voltage source is coupled to the first type of semiconductor material layer and the transparent planar electrode and applies a biasing voltage across each of the nanostructures. Each nanostructure emits light in an intensity that is proportional to an amount of compressive strain applied thereto.
Wang; Zhong L. (Atlanta, GA), Pan; Caofeng (Atlanta, GA)
Georgia Tech Research Corporation (Atlanta, GA)
13/ 748,737
January 24, 2013
STATEMENT OF GOVERNMENT INTEREST This invention was made with government support under agreement No. DE-FG02-07ER46394, awarded by the Department of Energy, and under agreement No. CMMI-0946418, awarded by the National Science Foundation. The government has certain rights in the invention.