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Membrane projection lithography

United States Patent

March 17, 2015
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
The various technologies presented herein relate to a three dimensional manufacturing technique for application with semiconductor technologies. A membrane layer can be formed over a cavity. An opening can be formed in the membrane such that the membrane can act as a mask layer to the underlying wall surfaces and bottom surface of the cavity. A beam to facilitate an operation comprising any of implantation, etching or deposition can be directed through the opening onto the underlying surface, with the opening acting as a mask to control the area of the underlying surfaces on which any of implantation occurs, material is removed, and/or material is deposited. The membrane can be removed, a new membrane placed over the cavity and a new opening formed to facilitate another implantation, etching, or deposition operation. By changing the direction of the beam different wall/bottom surfaces can be utilized to form a plurality of structures.
Burckel; David Bruce (Albuquerque, NM), Davids; Paul S. (Albuquerque, NM), Resnick; Paul J. (Albuquerque, NM), Draper; Bruce L. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
14/ 017,132
September 3, 2013
STATEMENT OF GOVERNMENTAL INTEREST This invention was developed under contract DE-AC04-94AL85000 between Sandia Corporation and the U.S. Department of Energy. The U.S. Government has certain rights in this invention.