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Group III-V device structure having a selectively reduced impurity concentration

United States Patent

August 5, 2014
View the Complete Patent at the US Patent & Trademark Office
There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body over the substrate, and a group III-V intermediate body having a bottom surface over the transition body. The semiconductor structure also includes a group III-V device layer over a top surface of the group III-V intermediate body. The group III-V intermediate body has a continuously reduced impurity concentration wherein a higher impurity concentration at the bottom surface is continuously reduced to a lower impurity concentration at the top surface.
Briere; Michael A. (Scottsdale, AZ)
International Rectifier Corporation (El Segundo, CA)
13/ 604,517
September 5, 2012
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-AR0000016 awarded by Advanced Research Projects Agency-Energy (ARPA-E). The Government has certain rights in this invention.