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III-nitride heterojunction devices having a multilayer spacer

United States Patent

February 25, 2014
View the Complete Patent at the US Patent & Trademark Office
In accordance with one implementation of the present disclosure, a III-Nitride heterojunction device includes a III-Nitride channel layer, a III-Nitride multilayer spacer situated over the III-Nitride channel layer, and a III-Nitride barrier layer situated over the III-Nitride multilayer spacer. A two-dimensional electron gas (2DEG) is formed near an interface of said III-Nitride Channel layer and said III-Nitride multilayer spacer. The III-Nitride multilayer spacer includes a III-Nitride interlayer. In one implementation, the III-Nitride multilayer spacer includes a III-Nitride polarization layer that is situated over the III-Nitride interlayer. The III-Nitride polarization layer has a higher total polarization than the III-Nitride interlayer, the III-Nitride channel layer, and the III-Nitride barrier layer.
Briere; Michael A. (Scottsdale, AZ)
International Rectifier Corporation (El Segundo, CA)
13/ 397,190
February 15, 2012
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-AR0000016 awarded by Advanced Research Projects Agency-Energy (ARPA-E). The Government has certain rights in this invention.