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Bypass diode for a solar cell

United States Patent

8,580,599
November 12, 2013
View the Complete Patent at the US Patent & Trademark Office
Methods of fabricating bypass diodes for solar cells are described. In one embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed on the first conductive region. In another embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed within, and surrounded by, an uppermost portion of the first conductive region but is not formed in a lowermost portion of the first conductive region.
Rim; Seung Bum (Palo Alto, CA), Kim; Taeseok (San Jose, CA), Smith; David D. (Campbell, CA), Cousins; Peter J. (Menlo Park, CA)
SunPower Corporation (San Jose, CA)
13/ 371,241
20120171799
February 10, 2012
The invention described herein was made with Governmental support under contract number DE-FC36-07G017043 awarded by the United States Department of Energy. The Government may have certain rights in the invention.