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Diamondoid monolayers as electron emitters

United States Patent

October 29, 2013
View the Complete Patent at the US Patent & Trademark Office
SLAC National Accelerator Laboratory - Visit the Technology Transfer Website
Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.
Yang; Wanli (El Cerrito, CA), Fabbri; Jason D. (San Francisco, CA), Melosh; Nicholas A. (Menlo Park, CA), Hussain; Zahid (Orinda, CA), Shen; Zhi-Xun (Stanford, CA)
The Board of Trustees of the Leland Stanford Junior University (Stanford, CA), The Regents of the University of California (Oakland, CA)
13/ 442,563
April 9, 2012
STATEMENT OF GOVERNMENTAL SUPPORT This invention was made with Government support under contract numbers DE-AC03-76SF00098 and DE-AC02-76SF-00515 awarded by the Department of Energy, 0304981 awarded by the National Science Foundation, and N00014-04-1-0048 awarded by the Office of Naval Research. The Government has certain rights in this invention.