A semiconductor emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
Part of the work leading to this invention was carried out with United States Government support provided under Grant No DE-FC26-04NT42275 from the United States Department of Energy and Cooperative Agreement W911NF-06-2-0040 awarded by United States Army Research Office. Thus, the United States Government has certain rights in this invention.