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Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectronics

United States Patent

8,669,164
March 11, 2014
View the Complete Patent at the US Patent & Trademark Office
Los Alamos National Laboratory - Visit the Technology Transfer Division Website
Microelectronic structures and devices, and method of fabricating a three-dimensional microelectronic structure is provided, comprising passing a first precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures to enhance formation of a first portion of said three-dimensional microelectronic structure; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said first portion of a selected three-dimensional microelectronic structure is formed from said first precursor material; positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs; passing a second precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures whereby a second portion of said three-dimensional microelectronic structure formation is enhanced; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said second portion of a selected three-dimensional microelectronic structure is formed from said second precursor material; and, positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs.
Maxwell; James L. (Jemez Springs, NM), Rose; Chris R. (Los Alamos, NM), Black; Marcie R. (Lincoln, MA), Springer; Robert W. (Los Alamos, NM)
Los Alamos National Security, LLC (Los Alamos, NM)
12/ 753,682
20100289060
April 2, 2010
STATEMENT REGARDING FEDERAL RIGHTS This invention was made with government support under Contract No. DE-AC 52-06NA25396, awarded by the U.S. Department of Energy. The government has certain rights in the invention.