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Piezo-phototronic sensor

United States Patent

October 15, 2013
View the Complete Patent at the US Patent & Trademark Office
A device includes a substrate having a first surface. A piezoelectric nanowire is disposed on the first surface of the substrate. The piezoelectric nanowire has a first end and an opposite second end. The piezoelectric nanowire is subjected to an amount of strain. A first Schottky contact is in electrical communication with the first end of the piezoelectric nanowire. A second Schottky contact is in electrical communication with the second end of the piezoelectric nanowire. A bias voltage source is configured to impart a bias voltage between the first Schottky contact and the second Schottky contact. A mechanism is configured to measure current flowing through the piezoelectric nanowire. The amount of strain is selected so that a predetermined current will flow through the piezoelectric nanowire when light of a selected intensity is applied to a first location on the piezoelectric nanowire.
Wang; Zhong L. (Marietta, GA), Hu; Youfan (Atlanta, GA), Zhang; Yan (Atlanta, GA)
Georgia Tech Research Corporation (Atlanta, GA)
12/ 945,077
November 12, 2010
STATEMENT OF GOVERNMENT INTEREST This invention was made with government support under contract No. DE-FG02-07ER46394, awarded by the Department of Energy and under contract No. W31P4Q-08-1-0009, awarded by the United States Army. The government has certain rights in the invention.