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Method for fabrication of crack-free ceramic dielectric films

United States Patent

8,647,737
February 11, 2014
View the Complete Patent at the US Patent & Trademark Office
The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.
Ma; Beihai (Naperville, IL), Balachandran; Uthamalingam (Willowbrook, IL), Chao; Sheng (Greensburg, PA), Liu; Shanshan (Naperville, IL), Narayanan; Manoj (Woodridge, IL)
UChicago Argonne, LLC (Chicago, IL)
13/ 250,926
20130084444
September 30, 2011
CONTRACTUAL ORIGIN OF THE INVENTION The U.S. Government has rights in this invention pursuant to Contract No. DE-AC02-06CH11357 between the U.S. Department of Energy and the University of Chicago representing Argonne National Laboratory.