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Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

United States Patent

December 3, 2013
View the Complete Patent at the US Patent & Trademark Office
The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.
Mazur; Eric (Concord, MA), Shen; Mengyan (Belmont, MA)
President and Fellows of Harvard College (Cambridge, MA)
13/ 021,409
February 4, 2011
FEDERALLY SPONSORED RESEARCH The invention was made with Government Support under contract DE-FC36-01GO11053 awarded by Department of Energy and under grant NSF-PHY-0117795 awarded by National Science Foundation and. The Government has certain rights in the invention.