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Proximity charge sensing for semiconductor detectors

United States Patent

8,552,429
October 8, 2013
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.
Luke; Paul N. (Castro Valley, CA), Tindall; Craig S. (San Ramon, CA), Amman; Mark (San Francisco, CA)
The Regents of the University of California (Oakland, CA)
12/ 604,173
20100102844
October 22, 2009
STATEMENT OF GOVERNMENTAL SUPPORT This invention was made in the course of or under prime contract No. DE-ACO2-05CH11231 between the Department of Energy and the University of California. The government has certain rights in this invention.