Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.
STATEMENT OF GOVERNMENT INTERESTS
The invention was made with U.S. Government support. The Government may have certain rights in the invention under U.S. Department of Energy, Office of Science, Basic Energy Sciences under Contract No. W-31-109-ENG-38, NSF DMR-0313764, ECS-0210449, ONR N00014-00-1-0372, N00014-01-1-0365 and AFOSR FA9550-04-1-0077.