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Low temperature junction growth using hot-wire chemical vapor deposition

United States Patent

February 4, 2014
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
Hot-Wire Chemical Vapor Deposition (HWCVD) technologies
A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.
Wang; Qi (Littleton, CO), Page; Matthew (Littleton, CO), Iwaniczko; Eugene (Lafayette, CO), Wang; Tihu (Littleton, CO), Yan; Yanfa (Littleton, CO)
Alliance for Sustainable Energy, LLC (Golden, CO)
12/ 742,001
November 9, 2007
CONTRACTUAL ORIGIN The United States Government has rights in this invention under Contract No. DE-AC36-99GO10337 between the United States Department of Energy and the National Renewable Energy Laboratory, a Division of the Midwest Research Institute.