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Lattice matched semiconductor growth on crystalline metallic substrates

United States Patent

November 5, 2013
View the Complete Patent at the US Patent & Trademark Office
Techniques for Growth of Lattice-Matched Semiconductor Layers
Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or metal alloy substrate having a crystalline surface with a known lattice parameter (a). The methods further include growing a crystalline semiconductor alloy layer on the crystalline substrate surface by coincident site lattice matched epitaxy. The semiconductor layer may be grown without any buffer layer between the alloy and the crystalline surface of the substrate. The semiconductor alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter (a). The semiconductor alloy may further be prepared to have a selected band gap.
Norman; Andrew G. (Evergreen, CO), Ptak; Aaron J. (Littleton, CO), McMahon; William E. (Denver, CO)
Alliance for Sustainable Energy, LLC (Golden, CO)
12/ 551,397
August 31, 2009
CONTRACTUAL ORIGIN The United States Government has rights in this invention under Contract No. DE-AC36-08GO28308 between the United States Department of Energy and the Alliance for Sustainable Energy, LLC, the manager and operator of the National Renewable Energy Laboratory.