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Bi-Se doped with Cu, p-type semiconductor

United States Patent

August 20, 2013
View the Complete Patent at the US Patent & Trademark Office
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A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.
Bhattacharya; Raghu Nath (Littleton, CO), Phok; Sovannary (Lakewood, CO), Parilla; Philip Anthony (Lakewood, CO)
U.S. Department of Energy (Washington, DC)
12/ 815,585
June 15, 2010
GOVERNMENT INTERESTS The United States Government has rights in this invention pursuant to Contract No. DE-AC36-98G010337, between the U.S. Department of Energy (DOE) and the Midwest Research Institute.